Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Yi Fu; Q. Fan; S. Chevtchenko; Ü. Özgür; H. Morkoç; You Ke; Robert Devaty; W. J. Choyke; C. K. Inoki; T. S. Kuan

doi:10.1117/12.706938

8 February 2007 Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Yi Fu, Q. Fan, S. Chevtchenko, Ü. Özgür, H. Morkoç, You Ke, Robert Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647305 (2007) https://doi.org/10.1117/12.706938
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Growth and polarity control of GaN and AlN on carbon-face SiC (C-SiC) by metalorganic vapor phase epitaxy (MOVPE) are reported. The polarities of GaN and AlN layers were found to be strongly dependent on the pre-growth treatment of C-SiC substrates. A pre-flow of trimethyaluminum (TMAl) or a very low NH₃/TMAl ratio resulted in Al(Ga)-polarity layers on C-SiC. Otherwise, N-polarity layers resulted. The polarities of AlN and GaN layers were conveniently determined by their etching rate in KOH or H₃PO₄, namely the etching rate on N-polarity is substantial larger, a method reported earlier. We suggest that the Al adatoms form several Al adlayers on C-SiC and change the incorporation sequence of Ga(Al) and N leading to a metal polarity surface. In addition, the hexagonal pyramids, typical on N-polarity GaN surface, are absent on N-polarity GaN grown on off-axis C-SiC owing to high density of terraces on the substrate surface. The properties of GaN layers grown on C-SiC have been studied by X-ray diffraction and are reported in this paper.

Citation Download Citation

Yi Fu, Q. Fan, S. Chevtchenko, Ü. Özgür, H. Morkoç, You Ke, Robert Devaty, W. J. Choyke, C. K. Inoki, and T. S. Kuan "Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647305 (8 February 2007); https://doi.org/10.1117/12.706938

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