Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

C. W. Kuo; C. M. Chen; C. H. Kuo; G. C. Chi

doi:10.1117/12.700303

8 February 2007 Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

C. W. Kuo, C. M. Chen, C. H. Kuo, G. C. Chi

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730U (2007) https://doi.org/10.1117/12.700303
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.

Citation Download Citation

C. W. Kuo, C. M. Chen, C. H. Kuo, and G. C. Chi "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730U (8 February 2007); https://doi.org/10.1117/12.700303

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available