III-V based THz detectors and plasmon effects

A. G. U. Perera

doi:10.1117/12.693068

2 February 2007 III-V based THz detectors and plasmon effects

A. G. U. Perera

Proceedings Volume 6479, Quantum Sensing and Nanophotonic Devices IV; 64790O (2007) https://doi.org/10.1117/12.693068
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The THz region is of considerable interest with research on both single element detectors and imagers. Results are reported on heterojunction and homojunction detectors using III-V semiconductor materials. Both Nitride and Antimonide based detectors showed broad response frequencies out to 1 THz. Arsenide based detectors have shown a threshold frequency tailorable in the range of 2.3-20 THz. The mechanisms of operation in these detectors will be discussed, and potential advantages and disadvantages of the materials for various frequency ranges will be considered. Among these are the increased control in tailoring the workfunction in antimonides, and increased THz absorption in the nitrides. The usage of surface plasmon effects in surface structures such as gratings to enhance detector response is also considered. The enhanced frequency for a given grating can be determined from the phase-matching condition. For a grating with 4.5 &mgr;m spacing this leads to increased absorption at 14 &mgr;m. Experimental results on the effects of surface plasmons on absorption and reflection will be presented. Designs for improved THz detectors based on these ideas will also be discussed.

Citation Download Citation

A. G. U. Perera "III-V based THz detectors and plasmon effects", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790O (2 February 2007); https://doi.org/10.1117/12.693068

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