III-nitride avalanche photodiodes

Patrick Kung; Ryan McClintock; Jose Luis Pau Vizcaino; Kathryn Minder; Can Bayram; Manijeh Razeghi

doi:10.1117/12.713774

2 February 2007 III-nitride avalanche photodiodes

Patrick Kung, Ryan McClintock, Jose Luis Pau Vizcaino, Kathryn Minder, Can Bayram, Manijeh Razeghi

Proceedings Volume 6479, Quantum Sensing and Nanophotonic Devices IV; 64791J (2007) https://doi.org/10.1117/12.713774
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first backilluminated GaN p-i-n APD structures on transparent sapphire substrates. The 25 μm x 25 μm device characteristics were measured, and compared with the same devices grown on GaN templates, under low bias and linear mode avalanche operation where they exhibited gains near 1500 after undergoing avalanche breakdown. The breakdown electric field in GaN was determined to be 2.73 MV/cm. The hole impact ionization coefficients were shown to be greater than those of electrons. These APDs were also successfully operated under Geiger mode.

Citation Download Citation

Patrick Kung, Ryan McClintock, Jose Luis Pau Vizcaino, Kathryn Minder, Can Bayram, and Manijeh Razeghi "III-nitride avalanche photodiodes", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791J (2 February 2007); https://doi.org/10.1117/12.713774

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