Si/Ge platform for lasers, amplifiers, and nonlinear optical devices based on the Raman effect

Ricardo Claps; Dimitrios Dimitropoulos; Varun Raghunathan; Sasan Fathpour; Bahram Jalali; Bernard Jusserand

doi:10.1117/12.699524

8 February 2007 Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect

Ricardo Claps, Dimitrios Dimitropoulos, Varun Raghunathan, Sasan Fathpour, Bahram Jalali, Bernard Jusserand

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648510 (2007) https://doi.org/10.1117/12.699524
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.

Citation Download Citation

Ricardo Claps, Dimitrios Dimitropoulos, Varun Raghunathan, Sasan Fathpour, Bahram Jalali, and Bernard Jusserand "Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648510 (8 February 2007); https://doi.org/10.1117/12.699524

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Phonons

Germanium

Raman scattering

Scattering

Raman spectroscopy

Stereolithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years