High-temperature silicon evanescent lasers

John E. Bowers; Hyundai Park; Alexander W. Fang; Richard Jones; Oded Cohen; Mario J. Paniccia

doi:10.1117/12.714274

26 February 2007 High-temperature silicon evanescent lasers

John E. Bowers, Hyundai Park, Alexander W. Fang, Richard Jones, Oded Cohen, Mario J. Paniccia

Author Affiliations +

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648515 (2007) https://doi.org/10.1117/12.714274
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We present an electrically pumped silicon evanescent laser that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer and is bonded with the AlGaInAs quantum well structure using low temperature O₂ plasma-assisted wafer bonding. The optical mode in the hybrid waveguide is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain via electrical current injection. The device lases continuous wave at 1577 nm with a threshold of 65 mA at 15 °C. The maximum single-sided fiber-coupled cw output power is 1.8 mW. The maximum operating temperature is 40 °C mainly limited by a high series resistance of the device. Operation up to 60 °C should be achievable by lowering the series resistance and thermal impedance.

Citation Download Citation

John E. Bowers, Hyundai Park, Alexander W. Fang, Richard Jones, Oded Cohen, and Mario J. Paniccia "High-temperature silicon evanescent lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648515 (26 February 2007); https://doi.org/10.1117/12.714274

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