Geometrical description of the microloading effect in silicon trench structures

Iryna Titarenko; Enna Altshuler; Rama Tweg

doi:10.1117/12.708892

27 March 2007 Geometrical description of the microloading effect in silicon trench structures

Iryna Titarenko, Enna Altshuler, Rama Tweg

Proceedings Volume 6520, Optical Microlithography XX; 65204D (2007) https://doi.org/10.1117/12.708892
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Standard Model Based OPC is based on resist and after etch CD measurements. In the case of non-linear photo-etch bias due to the etch microloading effect two-dimensional configuration can be wrongly corrected by the OPC model and hence lead to possible Si bridging. This paper reports a geometrical model for the determination of potential bridging in silicon trench structures that depends on the proximity of neighboring features. The model shows a possibility to detect and correct the post OPC data base by taking into account the non-linear effect caused by the non linear etch microloading. This approach can at the end leave the OPC model with a more straightforward photo resist model (and prevent the need to recreate a new OPC model), awhile-adding additional step of correction just in the locations of killer effects like bridging may occur.

Citation Download Citation

Iryna Titarenko, Enna Altshuler, and Rama Tweg "Geometrical description of the microloading effect in silicon trench structures", Proc. SPIE 6520, Optical Microlithography XX, 65204D (27 March 2007); https://doi.org/10.1117/12.708892

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