Development of a Si:As blocked impurity band detector for far IR detection

Deniz S. Tezcan; Jan Putzeys; Koen De Munck; Tim Souverijns; Patrick Merken; Paolo Fiorini; Chris Van Hoof; Thierry Dartois; Claude Israbian; Stephan M. Birkmann; Jutta Stegmaier; Ulrich Grözinger; Oliver Krause; Piet De Moor

doi:10.1117/12.733779

12 September 2007 Development of a Si:As blocked impurity band detector for far IR detection

Deniz S. Tezcan, Jan Putzeys, Koen De Munck, Tim Souverijns, Patrick Merken, Paolo Fiorini, Chris Van Hoof, Thierry Dartois, Claude Israbian, Stephan M. Birkmann, Jutta Stegmaier, Ulrich Grözinger, Oliver Krause, Piet De Moor

Author Affiliations +

Proceedings Volume 6660, Infrared Systems and Photoelectronic Technology II; 66600R (2007) https://doi.org/10.1117/12.733779
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

This paper reports on the fabrication and characterization of a linear array of Blocked Impurity Band (BIB) far infrared detectors and of the related Cryogenic Readout Electronics (CRE). It is part of the ESA DARWIN project which aims at the study of exoplanets by means of null interferometry and requires high performance infrared detector arrays in the 6 18μm range. Si:As BIB detectors have been fabricated on an infrared transparent Silicon substrate enabling backside illumination. The buried contact, the active and the blocking layers are deposited by epitaxy; the doping profile is controlled by adjusting the growth parameters. Access to the buried contact is provided by anisotropic silicon etch of V-grooves in the epi layers. Spray coating of photoresist is used for the lithography of the wafers with high topography. The CRE is composed of an input stage based on an integrating amplifier in AC coupled feedback with selectable integrator capacitors, of a sample and hold stage which provides isolation between input and sampling capacitance, and of an output buffer with multiplexing switch. The readout is optimized for low noise with minimum operating temperature of 4K. Linear arrays made of 42 and 88 detectors and having 30μm pixel pitch with various active areas are fabricated. Detector arrays are coupled to the CRE by Indium bumps using flip-chip technology. Measurements on the readout show reduced noise, good linearity and dynamic range. First detector characterization results are presented.

Citation Download Citation

Deniz S. Tezcan, Jan Putzeys, Koen De Munck, Tim Souverijns, Patrick Merken, Paolo Fiorini, Chris Van Hoof, Thierry Dartois, Claude Israbian, Stephan M. Birkmann, Jutta Stegmaier, Ulrich Grözinger, Oliver Krause, and Piet De Moor "Development of a Si:As blocked impurity band detector for far IR detection", Proc. SPIE 6660, Infrared Systems and Photoelectronic Technology II, 66600R (12 September 2007); https://doi.org/10.1117/12.733779

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available