PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
These studies consist of measuring the frequency dependent transmittance (T(ω)) and reflectance (R(ω)) above
and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd1-xZnxTe materials for
x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that
the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near
this gap energy at low temperatures for the x=0.04 sample. The close proximity of these peaks to the optical
transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The
decay of these excitonic absorptions may contribute to a photoluminescence and transient background response
of these back-illuminated HgCdTe CCD detectors.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Manuel A. Quijada, Ross Henry, "Temperature evolution of exciton absorptions in Cd1-xZnxTe materials," Proc. SPIE 6692, Cryogenic Optical Systems and Instruments XII, 669206 (17 September 2007); https://doi.org/10.1117/12.735604