Paper
17 September 2007 Temperature evolution of exciton absorptions in Cd1-xZnxTe materials
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Abstract
These studies consist of measuring the frequency dependent transmittance (T(ω)) and reflectance (R(ω)) above and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd1-xZnxTe materials for x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures for the x=0.04 sample. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manuel A. Quijada and Ross Henry "Temperature evolution of exciton absorptions in Cd1-xZnxTe materials", Proc. SPIE 6692, Cryogenic Optical Systems and Instruments XII, 669206 (17 September 2007); https://doi.org/10.1117/12.735604
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Cited by 2 scholarly publications.
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KEYWORDS
Zinc

Reflectivity

Tellurium

Cadmium

Sensors

Excitons

Absorption

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