High resolution patterning and simulation on Mo/Si multilayer for EUV masks

N. Tsikrikas; G. P. Patsis; I. Raptis; A. Gerardino

doi:10.1117/12.798804

2 May 2008 High resolution patterning and simulation on Mo/Si multilayer for EUV masks

N. Tsikrikas, G. P. Patsis, I. Raptis, A. Gerardino

Proceedings Volume 6792, 24th European Mask and Lithography Conference; 679216 (2008) https://doi.org/10.1117/12.798804
Event: 24th European Mask and Lithography Conference, 2008, Dresden, Germany

Abstract

Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy.

Citation Download Citation

N. Tsikrikas, G. P. Patsis, I. Raptis, and A. Gerardino "High resolution patterning and simulation on Mo/Si multilayer for EUV masks", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679216 (2 May 2008); https://doi.org/10.1117/12.798804

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