Paper
11 January 2008 Photovoltaic properties of ferroelectrics and their applications to optical sensor
Masaaki Ichiki, Harumi Furue, Takeshi Kobayashi, Yasushi Morikawa, Kazuhiro Nonaka, Ryutaro Maeda
Author Affiliations +
Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 680011 (2008) https://doi.org/10.1117/12.760416
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
Photovoltaic (Pb,La)(Zr,Ti)O3 (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of micro-electro-mechanical systems (MEMS).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Ichiki, Harumi Furue, Takeshi Kobayashi, Yasushi Morikawa, Kazuhiro Nonaka, and Ryutaro Maeda "Photovoltaic properties of ferroelectrics and their applications to optical sensor", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 680011 (11 January 2008); https://doi.org/10.1117/12.760416
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KEYWORDS
Photovoltaics

Electrodes

Crystals

Microelectromechanical systems

Optical sensors

Semiconductors

Lead

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