Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts

Ashkan Behnam; Jason L. Johnson; Yongho Choi; M. Günhan Ertosun; Zhuangchun Wu; Andrew G. Rinzler; Pawan Kapur; Krishna C. Saraswat; Ant Ural

doi:10.1117/12.761935

20 February 2008 Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts

Ashkan Behnam, Jason L. Johnson, Yongho Choi, M. Günhan Ertosun, Zhuangchun Wu, Andrew G. Rinzler, Pawan Kapur, Krishna C. Saraswat, Ant Ural

Author Affiliations +

Proceedings Volume 6885, MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface; 68850A (2008) https://doi.org/10.1117/12.761935
Event: MOEMS-MEMS 2008 Micro and Nanofabrication, 2008, San Jose, California, United States

Abstract

We fabricate and experimentally characterize metal-semiconductor-metal (MSM) photodetectors with CNT film Schottky electrodes on n-type and p-type silicon substrates. We extract a Schottky barrier height of ~0.45 eV and ~0.51 eV for CNT films on n-type and p-type Si respectively. The extracted barrier height corresponds to a CNT film workfunction of 4.5-4.7 eV, which is within the range of the previously reported workfunction values for individual CNTs. Furthermore, we find that while at temperatures above 240°K thermionic emission is the dominant transport mechanism, at lower temperatures tunneling begins to dominate. We also characterize the photoresponse of the CNT film-Si MSM photodetector by illuminating the samples with a 633 nm HeNe laser. We observe that while the photocurrent of the CNT film MSM devices is similar to that of the Ti/Au control samples at high biases, their lower dark current results in a higher photo-to-dark current ratio relative to the control devices. We explain these observations by comparing the two interfaces. This work opens up the possibility of integrating CNT films as transparent and conductive Schottky electrodes in conventional semiconductor electronic and optoelectronic devices.

Citation Download Citation

Ashkan Behnam, Jason L. Johnson, Yongho Choi, M. Günhan Ertosun, Zhuangchun Wu, Andrew G. Rinzler, Pawan Kapur, Krishna C. Saraswat, and Ant Ural "Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts", Proc. SPIE 6885, MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface, 68850A (20 February 2008); https://doi.org/10.1117/12.761935

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Electrodes

Silicon

Control systems

Metals

Photodetectors

Silicon films

Temperature metrology

Show All Keywords

Keywords/Phrases

Search In:

Publication Years