Paper
22 February 2008 Semiconductor laser subject to intense feedback with variably rotated polarization
Noam Gross, Zav Shotan, Tal Galfsky, Lev Khaykovich
Author Affiliations +
Abstract
A semiconductor laser subject to delayed optical feedback is investigated in the limit of intense feedback power. Back-injection of light with variably rotated polarization reveals a symmetry breaking in laser emission spectra and output power when the rotation angle is changed in the vicinity of the orthogonal orientation. To explain the observed asymmetry we propose a simple geometric model which includes the relative contributions of both TE and TM lasing modes into the feedback light. In a range of feedback polarization rotation angles the emission spectra of the laser reveal a gap with width of more than a terahertz. The position of the gap and its width are shown to be regulated by means of feedback polarization rotation angle. We demonstrate that a theoretical approach, based on carrier density grating induced potential, explains our experimental results.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noam Gross, Zav Shotan, Tal Galfsky, and Lev Khaykovich "Semiconductor laser subject to intense feedback with variably rotated polarization", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890A (22 February 2008); https://doi.org/10.1117/12.784328
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Cited by 1 scholarly publication.
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KEYWORDS
Polarization

Modulation

Refractive index

Semiconductor lasers

Optical testing

Stereolithography

Correlation function

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