Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T Steiner; M. Kira; S. W. Koch

doi:10.1117/12.784330

22 February 2008 Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T Steiner, M. Kira, S. W. Koch

Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 68890D (2008) https://doi.org/10.1117/12.784330
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

Citation Download Citation

J. T Steiner, M. Kira, and S. W. Koch "Nonlinear excitations of semiconductor quantum wells with intense terahertz fields", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890D (22 February 2008); https://doi.org/10.1117/12.784330

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available