Paper
7 February 2008 Strain-compensated AlAs-InGaAs quantum-cascade lasers with emission wavelength 3-5 μm
W. Ted Masselink, Mykhaylo P. Semtsiv, Martin Wienold, Mikaela Chashnikova, Ismail Bayrakli, Matthias Klinkmüller
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Abstract
A design strategy for short wavelength (equation) quantum-cascade lasers (QCLs) on InP substrates is discussed and the performance of these lasers evaluated. The QCLs are based on strain-compensated AlAs-In0.73Ga0.27As heterostructures grown using gas-source molecular-beam epitaxy on InP substrates. Both composite barriers based on AlAs-In0.55Al0.45As and composite wells based on In0.73Ga0.27As-In0.55Al0.45As are used to achieve laser emission at wavelengths as short as 3.05 μm by avoiding leakage from the upper laser state into either the higher-lying miniband or into indirect states within the heterostructure.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Ted Masselink, Mykhaylo P. Semtsiv, Martin Wienold, Mikaela Chashnikova, Ismail Bayrakli, and Matthias Klinkmüller "Strain-compensated AlAs-InGaAs quantum-cascade lasers with emission wavelength 3-5 μm", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688913 (7 February 2008); https://doi.org/10.1117/12.784324
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Cited by 4 scholarly publications.
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KEYWORDS
Quantum cascade lasers

Composites

Indium arsenide

Laser damage threshold

Heterojunctions

Temperature metrology

Absorption

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