InAs-based quantum-cascade lasers

J. Devenson; R. Teissier; O. Cathabard; A. N. Baranov

doi:10.1117/12.767653

29 January 2008 InAs-based quantum-cascade lasers

J. Devenson, R. Teissier, O. Cathabard, A. N. Baranov

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090U (2008) https://doi.org/10.1117/12.767653
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Different issues of the development of short wavelength quantum cascade lasers (QCLs) in the InAs/AlSb system, concerning both optical and electronic design, are considered. A plasmon enhanced waveguide is shown to be suitable for use in InAs-based QCLs operating at wavelengths near 3 μm. High performance lasers emitting near 3.3 μm are demonstrated, as well as short wavelength QCLs emitting down to 2.75 μm. It is shown that their performances are not limited neither by interband absorption across the small band gap of InAs, nor by the electron scattering into the L-minimum of the well material.

Citation Download Citation

J. Devenson, R. Teissier, O. Cathabard, and A. N. Baranov "InAs-based quantum-cascade lasers", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090U (29 January 2008); https://doi.org/10.1117/12.767653

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