External cavity phase-locked semiconductor tapered lasers

I. Hassiaoui; N. Michel; M. Lecomte; O. Parillaud; M. Calligaro; M. Krakowski; R. McBride; G. Bourdet; J.-P. Huignard

doi:10.1117/12.763398

29 January 2008 External cavity phase-locked semiconductor tapered lasers

I. Hassiaoui, N. Michel, M. Lecomte, O. Parillaud, M. Calligaro, M. Krakowski, R. McBride, G. Bourdet, J.-P. Huignard

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69091A (2008) https://doi.org/10.1117/12.763398
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

This work relates to combining a phase corrected array of tapered laser diodes, emitting at λ = 975 nm, coherently using the Talbot effect. Diffractive coupling of semiconductor lasers by use of the Talbot effect provides a means for coherent beam addition of multiple elements in laser diode arrays and makes possible a very compact external cavity. We have used, in this work, fully index guided tapered laser diodes. They contain a ridge waveguide, which acts as a modal filter, and a tapered section of increasing width, which provides high power. We have realized arrays of several emitters (N=10), which are not optically coupled to each other. First, to improve the beam quality of the array, a phase correcting micro system, achieving collimation in the fast axis, correction of the wave front tilts in both directions and also a slow axis collimation, was added. The FWHM divergences of the array were reduced from 34° to 0.17° in the fast-axis and from 3.5° to 0.7° in the slow-axis at 6A, 3.7 W. Then, to be close to diffraction limit, we have combined this corrected array coherently using the Talbot effect. We have obtained quasi-monolobe slow axis far field profile for the in phase mode with a central peak divergence of only 0.27° at 1.5 A, 315 mW under CW operation and of only 0.20° at 2.5 A, 787 mW under pulsed operation.

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I. Hassiaoui, N. Michel, M. Lecomte, O. Parillaud, M. Calligaro, M. Krakowski, R. McBride, G. Bourdet, and J.-P. Huignard "External cavity phase-locked semiconductor tapered lasers", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69091A (29 January 2008); https://doi.org/10.1117/12.763398

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KEYWORDS

Semiconductor lasers

Pulsed laser operation

Collimation

Continuous wave operation

Diffraction

Mirrors

Semiconductors

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