GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25 um

B. Rösener; N. Schulz; M. Rattunde; C. Manz; K. Köhler; J. Wagner

doi:10.1117/12.781143

8 May 2008 GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25 μm

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner

Author Affiliations +

Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 699702 (2008) https://doi.org/10.1117/12.781143
Event: SPIE Photonics Europe, 2008, Strasbourg, France

Abstract

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) emitting at 2.25 μm which are capable of multiple-Watt output power. VECSEL structures were grown on GaSb-substrates by molecular beam epitaxy. SiC heat spreaders were capillary bonded onto the surface of the VECSEL chip in order to facilitate efficient heat removal. A continuous-wave output power of more than 3.4 W was recorded at a heat sink temperature of -10 °C. At room temperature (20 °C) we still obtained more than 1.6 W output power. A beam propagation factor in the range of M²≤5 was measured at maximum output power. In adjusting the fundamental mode diameter on the VECSEL chip to the pump spot diameter the beam quality could be further improved resulting in a beam propagation factor of M²~1.5. Furthermore, initial results on a GaSb-based dual-chip VECSEL are reported, capable of delivering a maximum output power of 3.3 W for a heat sink temperature of 20 °C and an emission wavelength of 2.25 μm.

Citation Download Citation

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner "GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25 μm", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 699702 (8 May 2008); https://doi.org/10.1117/12.781143

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