Electrical properties of carbon nanotube FETs

T. Mizutani; Y. Ohno; S. Kishimoto

doi:10.1117/12.794695

4 September 2008 Electrical properties of carbon nanotube FETs

T. Mizutani, Y. Ohno, S. Kishimoto

Proceedings Volume 7037, Carbon Nanotubes and Associated Devices; 703703 (2008) https://doi.org/10.1117/12.794695
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Based on the two-probe and four-probe resistance measurements, it has been shown that the carrier transport at the contact is explained by the edge contact model even in the diffusive regime. The chemical doping using F₄TCNQ was effective in reducing not only the channel resistance but also the contact resistance. In the CNTFETs fabricated using plasma-enhanced (PE) CVD-grown nanotubes, the drain current of the most of the devices could be modulated by the gate voltage with small OFF current suggesting the preferential growth of the nanotubes with semiconducting behavior. Multichannel top-gate CNTFETs with horizontally-aligned nanotubes as channels have been successfully fabricated using CNT growth on the ST-cut quartz substrate, arc-discharge plasma deposition of the catalyst metal, and ALD gate insulator deposition. The devices show normally-on and n-type conduction property with a relatively-high ON current of 13 mA/mm. CNTFETs with nanotube network have also been fabricated by direct growth on the SiO₂/Si substrate using grid-inserted PECVD and using catalyst formed on the channel area of the FETs. The uniformity of the electrical properties of the network channel CNTFETs were very good. Finally, it has been shown that the surface potential profile measurement based on the electrostatic force detection in the scanning probe microscopy was effective in studying the behavior of the CNTFETs such as the transient behavior and the effect of the defects.

Citation Download Citation

T. Mizutani, Y. Ohno, and S. Kishimoto "Electrical properties of carbon nanotube FETs", Proc. SPIE 7037, Carbon Nanotubes and Associated Devices, 703703 (4 September 2008); https://doi.org/10.1117/12.794695

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Resistance

Doping

Metals

Field effect transistors

Semiconductors

Electrodes

Carbon nanotubes

Show All Keywords

Keywords/Phrases

Search In:

Publication Years