Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy

J. Liu; K. C. Mandal; G. Koley

doi:10.1117/12.796253

4 September 2008 Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy

J. Liu, K. C. Mandal, G. Koley

Author Affiliations +

Proceedings Volume 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X; 70790C (2008) https://doi.org/10.1117/12.796253
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

Surface electronic properties of Cd_xZn_yTe were characterized through scanning spreading resistance microscopy (SSRM) and correlated IR transmittance maps. We observed the magnitude of the SSRM current is dominant by the density of surface localized Te precipitates and spatial variation of Zn content. The magnitude of the average SSRM current for forward probe bias was found to correlate strongly with the density of Te precipitates, while the variation in I-V characteristics were caused by slight p-type or n-type characteristics due to non-uniformity in Zn content of the crystal. Experimentally observed I-V characteristics were simulated using thermionic emission theory.

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J. Liu, K. C. Mandal, and G. Koley "Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy", Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70790C (4 September 2008); https://doi.org/10.1117/12.796253

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