Paper
2 December 2008 TiO2-PHT interface influence to charge carrier photo generation and recombination
G. Sliaužys, G. Juška, K. Genevičius, J. H. Smått, M. Lindén, R. Österbacka
Author Affiliations +
Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 71420K (2008) https://doi.org/10.1117/12.815634
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia
Abstract
In this paper the influence of TiO2/polymer (RR-P3HT) interface to photo generated charge carriers separation and recombination have been studied. The quantum efficiency and charge carrier recombination were studied in heterojunctions of TiO2 (prepared with porous or flat interface) and spin coated RR-P3HT polymer film using time of flight (TOF) and double injection (DoI) transient methods. From the shape of the TOF transients it was determined that the charge carrier generation is taking place in the vicinity of the TiO2/P3HT interface. Samples with porous TiO2 films show better charge carrier separation, but the deep trapping of charge carriers at the interface appear. The charge carrier recombination is trimolecular (Auger type recombination) with the similar values of recombination coefficients in both types of samples.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Sliaužys, G. Juška, K. Genevičius, J. H. Smått, M. Lindén, and R. Österbacka "TiO2-PHT interface influence to charge carrier photo generation and recombination", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420K (2 December 2008); https://doi.org/10.1117/12.815634
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KEYWORDS
Titanium dioxide

Interfaces

Quantum efficiency

Heterojunctions

Organic materials

Polymers

Electrodes

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