Force versus position profiles of HeLa cells trapped in phototransistor-based optoelectronic tweezers

Steven L. Neale; Aaron T. Ohta; Hsan-Yin Hsu; Justin K. Valley; Arash Jamshidi; Ming C. Wu

doi:10.1117/12.809513

13 February 2009 Force versus position profiles of HeLa cells trapped in phototransistor-based optoelectronic tweezers

Steven L. Neale, Aaron T. Ohta, Hsan-Yin Hsu, Justin K. Valley, Arash Jamshidi, Ming C. Wu

Proceedings Volume 7210, Emerging Digital Micromirror Device Based Systems and Applications; 721004 (2009) https://doi.org/10.1117/12.809513
Event: SPIE MOEMS-MEMS: Micro- and Nanofabrication, 2009, San Jose, California, United States

Abstract

Phototransistor-based Optoelectronic Tweezers (Ph-OET) enables optical manipulation of microscopic particles in physiological buffer solutions by creating electrical field gradients around them. A spatial light pattern is created by a DMD based projector focused through a microscope objective onto the phototransistor. In this paper we look into what differences there are in the trap stiffness profiles of HeLa cells trapped by Ph-OET compared to previous a-Si based OET devices. We find that the minimum trap size for a HeLa cell using a phototransistor with pixel pitch 10.35μm is 24.06μm in diameter which can move cells at 20μms^-1 giving a trap stiffness of 8.38 x 10^-7 Nm^-1.

Citation Download Citation

Steven L. Neale, Aaron T. Ohta, Hsan-Yin Hsu, Justin K. Valley, Arash Jamshidi, and Ming C. Wu "Force versus position profiles of HeLa cells trapped in phototransistor-based optoelectronic tweezers", Proc. SPIE 7210, Emerging Digital Micromirror Device Based Systems and Applications, 721004 (13 February 2009); https://doi.org/10.1117/12.809513

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