Surface control of GaN alloys for photonic and electronic devices

Tamotsu Hashizume; Nanako Shiozaki; Kota Ohi

doi:10.1117/12.807587

18 February 2009 Surface control of GaN alloys for photonic and electronic devices

Tamotsu Hashizume, Nanako Shiozaki, Kota Ohi

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72160U (2009) https://doi.org/10.1117/12.807587
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Surface characterization and control technologies were applied to GaN and AlGaN surfaces. It was found that a unique "air-gap CV" technique is effective in evaluating surface state density on free AlGaN surfaces. A photoelectrochemical process, utilizing a mixed solution of propylene glycol and tartaric acid, was employed to form a thin oxide layer on GaN and AlGaN. We observed an enhancement of drain current in the AlGaN/GaN HEMT having a narrow channel width of 200 nm after the oxidation of the channel walls by the electrochemical process. To improve the uniformity of the effective electric field in the channel, a multi-mesa-channel (MMC) AlGaN/GaN HEMT has been proposed and developed. With forming a periodic trench just under the gate region by an ECR-plasma assisted dry etching, the MMC HEMT has parallel mesa-shaped channels with 2-dimensional electron gas (2DEG) surrounded by the top- and side-gate electrodes.

Citation Download Citation

Tamotsu Hashizume, Nanako Shiozaki, and Kota Ohi "Surface control of GaN alloys for photonic and electronic devices", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160U (18 February 2009); https://doi.org/10.1117/12.807587

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