Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

R. Pillai; D. Starikov; C. Boney; A. Bensaoula

doi:10.1117/12.809934

16 February 2009 Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

R. Pillai, D. Starikov, C. Boney, A. Bensaoula

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72161Y (2009) https://doi.org/10.1117/12.809934
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Employment of layered structures made of semiconductor materials with different optical absorption bands is a new way of realizing either broad band spectrum or selective multiple band photodetectors. A new concept of structures fabricated using stacked semiconducting layers to obtain a multi band spectral response is reported. Based on this approach, fabrication of a Solar-blind dual-band UV/IR photodetectors is demonstrated. Optimization of the device was carried out by modeling of the electric field distribution and developing tunneling barriers. The optimized Solar-blind UV/IR photodiode UV spectral response turns-on approximately around 265 nm (solar-blind) and peaks at 230 nm with a responsivity of approximately 0.0018 A/W. The IR diode response peaks at 1000nm with a responsivity of approximately 0.01 A/W.

Citation Download Citation

R. Pillai, D. Starikov, C. Boney, and A. Bensaoula "Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161Y (16 February 2009); https://doi.org/10.1117/12.809934

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