Nitride-based p-i-n photodetectors with Ni catalyst processing

Chin-Hsiang Chen

doi:10.1117/12.808536

19 February 2009 Nitride-based p-i-n photodetectors with Ni catalyst processing

Chin-Hsiang Chen

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162H (2009) https://doi.org/10.1117/12.808536
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Nitride-based materials have been widely used for photodetectors, however, Nitride-based p-i-n photodetectors with the use of InGaN as the intrinsic layer to modify the cut-off wavelength from 360 to 500nm was few reported. In this study, the p-i-n structure photodetectors with a p-GaN layer, an InGaN active layer and an n-type GaN layer were fabricated successfully. The Ni catalysts technology was applied in p-GaN layer to enhance ohmic characteristics of ptype layer. It was found that the photo-to-dark contrast ratios at 0.5V bias are 51.83. The cut-off wavelength was around 375nm.

Citation Download Citation

Chin-Hsiang Chen "Nitride-based p-i-n photodetectors with Ni catalyst processing", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162H (19 February 2009); https://doi.org/10.1117/12.808536

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