Photoluminescence upconversion in GaAs quantum wells

Soheyla Eshlaghi; Wieland Worthoff; A. D. Wieck; Dieter Suter

doi:10.1117/12.807916

9 February 2009 Photoluminescence upconversion in GaAs quantum wells

Soheyla Eshlaghi, Wieland Worthoff, A. D. Wieck, Dieter Suter

Proceedings Volume 7228, Laser Refrigeration of Solids II; 72280B (2009) https://doi.org/10.1117/12.807916
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We present a detailed experimental study of photoluminescence upconversion in GaAs quantum wells over a wide temperature range. The dependence of the upconversion on the well width is discussed and the conversion efficiency is determined as a function of laser detuning. The best results are achieved when the laser detuning is comparable to the thermal energy of the system, ▵E≈2k_BT.

Citation Download Citation

Soheyla Eshlaghi, Wieland Worthoff, A. D. Wieck, and Dieter Suter "Photoluminescence upconversion in GaAs quantum wells", Proc. SPIE 7228, Laser Refrigeration of Solids II, 72280B (9 February 2009); https://doi.org/10.1117/12.807916

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