Extension of high-illumination level dynamic range for CMOS active pixel sensors

Min-Woong Seo; Sang-Ho Seo; Jang-Kyoo Shin

doi:10.1117/12.816721

30 December 2008 Extension of high-illumination level dynamic range for CMOS active pixel sensors

Min-Woong Seo, Sang-Ho Seo, Jang-Kyoo Shin

Proceedings Volume 7268, Smart Structures, Devices, and Systems IV; 72681T (2008) https://doi.org/10.1117/12.816721
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia

Abstract

In this paper, we present a wide dynamic range active pixel sensor (APS) using an external charge pump circuit. The proposed pixel exhibits improved dynamic range through the compensated threshold voltage of a reset MOSFET. We confirmed that the light level which is the saturated output voltage in the proposed APS is about 170,000 lux, which is 36% higher than that of a conventional APS. The proposed APS is fabricated by using 2-poly 4-metal 0.35 &mgr; standard CMOS process. The unit pixel consists of an n+ diffusion / p-substrate photodiode, three NMOSFETs and the charge pump circuit which consists of two NMOSFETs and two capacitors.

Citation Download Citation

Min-Woong Seo, Sang-Ho Seo, and Jang-Kyoo Shin "Extension of high-illumination level dynamic range for CMOS active pixel sensors", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72681T (30 December 2008); https://doi.org/10.1117/12.816721

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