Design and fabrication considerations of EUVL collectors for HVM

G. Bianucci; G. L. Cassol; J. Kools; M. Prea; G. Salmaso; G. Valsecchi; F. E. Zocchi; D. Bolshukhin; M. Schürmann; G. Schriever; A. Mader; P. Zink

doi:10.1117/12.813652

17 March 2009 Design and fabrication considerations of EUVL collectors for HVM

G. Bianucci, G. L. Cassol, J. Kools, M. Prea, G. Salmaso, G. Valsecchi, F. E. Zocchi, D. Bolshukhin, M. Schürmann, G. Schriever, A. Mader, P. Zink

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 72710C (2009) https://doi.org/10.1117/12.813652
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The power roadmap for EUVL high volume manufacturing (HVM) exceeds the 200W EUV in-band power at intermediate focus, thus posing more demanding requirements on HVM sources, debris suppression systems and collectors. Starting from the lessons learned in the design and fabrication of the grazing incidence collectors for the Alpha EUVL scanners, Media Lario Technologies is developing HVM optical solutions that enable designed-in lifetime improvements, such as larger source-collector distances, optimized collection efficiency through larger collected solid angles, and customized EUV reflective layers. The optical design of an HVM collector is described together with the selection of the sacrificial ruthenium reflective layer. The water cooling layout of the collector is evolved from the integrated cooling technology developed at Alpha level into an innovative cooling layout that minimizes the thermal gradients across the mirrors and allows controlling the optical performance at the far-field plane. Finally, the evolution of the collector's manufacturing technologies for HVM is discussed. XTREME technologies and Philips Extreme UV support this work by integrating the collector in the complete source collector module (SoCoMo). At system level, each component of the SoCoMo is part of a development and improvement plan leading to a comprehensive system that will fulfill the 200+ W EUV in-band power at intermediate focus.

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G. Bianucci, G. L. Cassol, J. Kools, M. Prea, G. Salmaso, G. Valsecchi, F. E. Zocchi, D. Bolshukhin, M. Schürmann, G. Schriever, A. Mader, and P. Zink "Design and fabrication considerations of EUVL collectors for HVM", Proc. SPIE 7271, Alternative Lithographic Technologies, 72710C (17 March 2009); https://doi.org/10.1117/12.813652

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