CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process

Hisanori Sugimachi; Hitoshi Kosugi; Tsuyoshi Shibata; Junichi Kitano; Koichi Fujiwara; Kouji Itou; Michihiro Mita; Akimasa Soyano; Shiro Kusumoto; Motoyuki Shima; Yoshikazu Yamaguchi

doi:10.1117/12.814033

1 April 2009 CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process

Hisanori Sugimachi, Hitoshi Kosugi, Tsuyoshi Shibata, Junichi Kitano, Koichi Fujiwara, Kouji Itou, Michihiro Mita, Akimasa Soyano, Shiro Kusumoto, Motoyuki Shima, Yoshikazu Yamaguchi

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731D (2009) https://doi.org/10.1117/12.814033
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

After an analysis of the factors that causes critical dimension (CD) variation in the lithography process of the LLE (Litho-Litho-Etch) double-patterning technology that employs the freezing process, an optimum process for freezing the resist patterns to reduce the CD variation, which occurs after the 2^nd litho process, was achieved. By optimizing the track parameters of freezing process, CD variation is likely to be reduced not only in the 1^st resist pattern but also in the 2^nd resist pattern. The optimum conditions were adopted to form patterns of 40 nm resist lines and spaces in the evaluations conducted in this paper. The formation result showed improvement of 3 sigma of the within-wafer CD uniformity of both the 1^st resist pattern and the 2^nd resist pattern, by about 13% and 46% respectively.

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Hisanori Sugimachi, Hitoshi Kosugi, Tsuyoshi Shibata, Junichi Kitano, Koichi Fujiwara, Kouji Itou, Michihiro Mita, Akimasa Soyano, Shiro Kusumoto, Motoyuki Shima, and Yoshikazu Yamaguchi "CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731D (1 April 2009); https://doi.org/10.1117/12.814033

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