Mm- and THz-waves detector on the base of narrow-gap semiconductors

F. F. Sizov; V. Dobrovolsky; V. Zabudsky; Yu. Kamenev; N. Momot; J. Gumenjuk-Sychevska

doi:10.1117/12.819924

29 April 2009 Mm- and THz-waves detector on the base of narrow-gap semiconductors

F. F. Sizov, V. Dobrovolsky, V. Zabudsky, Yu. Kamenev, N. Momot, J. Gumenjuk-Sychevska

Proceedings Volume 7309, Passive Millimeter-Wave Imaging Technology XII; 73090M (2009) https://doi.org/10.1117/12.819924
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Narrow-gap direct detection mercury cadmium telluride (MCT) THz semiconductor hot electron bolometer (SHEB) is considered. Device operation takes into account the phenomena in semiconductor bipolar plasma and hot-carrier effect at uncooled or slightly cooled conditions. To examine the SHEB detector in the wide range of operation frequencies (ν=0.037-1.58 THz) the simplest dipole antennas were used in prototype arrays. The experiments were performed at T = 300 K at ν= 37, 50, 75 GHz, 0.89 and 1.58 THz with a MCT SHEB devices with intrinsic conductivity. At ν=1.58, 0.89, 0.078 and 0.037 THz the signal temperature dependencies were measured too. The sensitivity was S_v~2.5 V/W (estimated NEP~4×10^-10 W/Hz^1/2) at T=300 K; and S_v~2×10³ V/W (estimated NEP~3×10^-12 W/Hz^1/2) at T=78K and ν=37, and 78 GHz. The signal temperature dependences at ν=0.89 THz are different compared to those at ν=37 and 78 GHz. Temperature phase dependent signals are discussed with their dependence on energy relaxation time. A model of such a detector is developed. The radiation entrance through semiconductor surface and metal contacts are both modeled.

Citation Download Citation

F. F. Sizov, V. Dobrovolsky, V. Zabudsky, Yu. Kamenev, N. Momot, and J. Gumenjuk-Sychevska "Mm- and THz-waves detector on the base of narrow-gap semiconductors", Proc. SPIE 7309, Passive Millimeter-Wave Imaging Technology XII, 73090M (29 April 2009); https://doi.org/10.1117/12.819924

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