Monte Carlo simulation of ionized impurity scattering process in bulk silicon

Dmitrii Speransky

doi:10.1117/12.837084

17 June 2009 Monte Carlo simulation of ionized impurity scattering process in bulk silicon

Dmitrii Speransky

Proceedings Volume 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations; 737717 (2009) https://doi.org/10.1117/12.837084
Event: Nano-Design, Technology, Computer Simulations, 2008, Minsk, Belarus

Abstract

The results of Monte-Carlo simulation of ionized impurity scattering processes in doped silicon are presented. Adequacy and efficiency of the application of Ridley model to the calculation of ionized impurity scattering rates and electron mobility is proved via comparison of the simulation results with known experimental data.

Citation Download Citation

Dmitrii Speransky "Monte Carlo simulation of ionized impurity scattering process in bulk silicon", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 737717 (17 June 2009); https://doi.org/10.1117/12.837084

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