Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxy

Z. G. Li; M. H. You; G. J. Liu; L. Lin; M. Li; Z. L. Qiao; Y. Deng; Y. Wang; X. H. Wang

doi:10.1117/12.834993

24 August 2009 Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxy

Z. G. Li, M. H. You, G. J. Liu, L. Lin, M. Li, Z. L. Qiao, Y. Deng, Y. Wang, X. H. Wang

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811B (2009) https://doi.org/10.1117/12.834993
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

The growth parameters affecting the deposition of InGaSb quantum dots (QDs) on GaAs substrate by molecular beam epitaxy (MBE) were reported. The InGaSb were achieved using lower growth temperature and optimized growth interruption, which is important to obtain high-quality materials Photoluminescence (PL) measurements show the good optical quality of InGaSb QDs. At room temperature, the wavelength of PL spectrum and full-width at half-maximum (FWHM) are around 1.3 m and 106 meV, respectively.

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Z. G. Li, M. H. You, G. J. Liu, L. Lin, M. Li, Z. L. Qiao, Y. Deng, Y. Wang, and X. H. Wang "Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxy", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811B (24 August 2009); https://doi.org/10.1117/12.834993

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