Activation experiment of exponential-doping NEA GaAs photocathodes

Jijun Zou; Gangyong Lin; Xiong Wei; Lin Feng; Zhi Yang; Benkang Chang

doi:10.1117/12.835586

6 August 2009 Activation experiment of exponential-doping NEA GaAs photocathodes

Jijun Zou, Gangyong Lin, Xiong Wei, Lin Feng, Zhi Yang, Benkang Chang

Proceedings Volume 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications; 73841L (2009) https://doi.org/10.1117/12.835586
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

An exponential-doping GaAs photocathode was designed and activated, the achieved integral sensitivity for the exponential-doping cathode is 1956μA/lm, which is much higher than that of gradient-doping cathode with identical thickness of epitaxial layer. According to the quantum efficiency theory of exponential-doping cathode, we analyzed the reason responsible for the increase in integral sensitivity of exponential-doping cathode, which are mainly attributed to the invariable induced electric field, the photoelectrons driven by the field move towards the cathode surface by way of diffusion and drift. Accordingly, increase the average distance that photoelectrons transport and reduce the influence of the back-interface recombination velocity on photoemission.

Citation Download Citation

Jijun Zou, Gangyong Lin, Xiong Wei, Lin Feng, Zhi Yang, and Benkang Chang "Activation experiment of exponential-doping NEA GaAs photocathodes", Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73841L (6 August 2009); https://doi.org/10.1117/12.835586

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