Photo-reflectance characterization of USJ activation in millisecond annealing

Will Chism; Michael Current; Victor Vartanian

doi:10.1117/12.830900

24 August 2009 Photo-reflectance characterization of USJ activation in millisecond annealing

Will Chism, Michael Current, Victor Vartanian

Proceedings Volume 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III; 74050T (2009) https://doi.org/10.1117/12.830900
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

Photo-reflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This paper details the use of photo-reflectance to characterize dopant activation in ultra-shallow junction (USJ) structures formed using millisecond anneal processes. USJ structures were formed in silicon using 500eV boron implantation with a dose of 10¹⁵/cm², followed by flash anneals at 1250-1350°C. Reference metrology was performed using secondary ion mass spectroscopy (SIMS) and various sheet resistance (R_s) methods. Methods to calibrate photo-reflectance signals to active carrier concentration in USJ structures, including halo-doped samples, are described. Photo-reflectance is shown to be highly sensitive to active dopant concentration in USJ structures formed by millisecond annealing. Additionally, PR provides fast "on-product" measurement capability.

Citation Download Citation

Will Chism, Michael Current, and Victor Vartanian "Photo-reflectance characterization of USJ activation in millisecond annealing", Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050T (24 August 2009); https://doi.org/10.1117/12.830900

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