TiO2-based photosensitive oxide semiconductors for solar hydrogen

Janusz Nowotny; Tadeusz Bak

doi:10.1117/12.824509

24 August 2009 TiO₂-based photosensitive oxide semiconductors for solar hydrogen

Janusz Nowotny, Tadeusz Bak

Proceedings Volume 7408, Solar Hydrogen and Nanotechnology IV; 74080A (2009) https://doi.org/10.1117/12.824509
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

Titanium dioxide is a promising candidate for high-performance photocatalysts. Defect engineering may be applied for the modification of its properties, including the functional-related properties, in a controlled manner in order to achieve the desired/optimized performance. The present work reports the application of defect engineering for the modification of semiconducting properties of undoped TiO₂. The defect disorder is considered in terms of the predominant defect reactions. The related equilibrium constants are used to derive the defect disorder diagram for undoped TiO₂ in equilibrium (1273 K) in the gas phase of controlled oxygen activity (10−13 Pa < p(O2) < 105 Pa). The obtaind data on the concentration of electronic charge carriers have been used for the determination of the effect of p(O₂) on the change of Fermi energy within the band gap. The determined diagram may be applied for the selection of processing conditions of undoped TiO₂ with controlled semiconducting properties and the ability to donate or accept electrons.

Citation Download Citation

Janusz Nowotny and Tadeusz Bak "TiO₂-based photosensitive oxide semiconductors for solar hydrogen", Proc. SPIE 7408, Solar Hydrogen and Nanotechnology IV, 74080A (24 August 2009); https://doi.org/10.1117/12.824509

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