High efficiency phosphorescent OLEDs based on the heterostructured light emission and charge injection layers

Byung Doo Chin; Yuri Choi; Heume-Il Baek; Changhee Lee

doi:10.1117/12.828952

27 August 2009 High efficiency phosphorescent OLEDs based on the heterostructured light emission and charge injection layers

Byung Doo Chin, Yuri Choi, Heume-Il Baek, Changhee Lee

Author Affiliations +

Proceedings Volume 7415, Organic Light Emitting Materials and Devices XIII; 741510 (2009) https://doi.org/10.1117/12.828952
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

The light emitting efficiency and the stability of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping influenced by the heterostructured emissive layers and charge injection layer, are studied in terms of the charge injection behavior, carrier transporting mobility, and balancing of devices. The enhancement of the light emitting properties (higher efficiency and lower driving voltage) by use of heterostructures at emitting layer, either multilayers or mixing of hole- and electron-transporting materials (such as 4,4",4"-tris(N-carbazolyl)-triphenylamine); TCTA and bis(10-hydroxybenzo[h]quinolinate) beryllium; Bebq₂) was characterized. By a design of emitting layer structure for recombination, 30~50lm/W efficiency of devices with Ir(ppy)₃ and conventional transporting layer was possible.

Citation Download Citation

Byung Doo Chin, Yuri Choi, Heume-Il Baek, and Changhee Lee "High efficiency phosphorescent OLEDs based on the heterostructured light emission and charge injection layers", Proc. SPIE 7415, Organic Light Emitting Materials and Devices XIII, 741510 (27 August 2009); https://doi.org/10.1117/12.828952

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