Antimonide superlattice barrier infrared detectors

David Z. Ting; Cory J. Hill; Alexander Soibel; Jean Nguyen; Sam A. Keo; Jason M. Mumolo; Michael C. Lee; Baohau Yang; Sarath D. Gunapala

doi:10.1117/12.829047

27 August 2009 Antimonide superlattice barrier infrared detectors

David Z. Ting, Cory J. Hill, Alexander Soibel, Jean Nguyen, Sam A. Keo, Jason M. Mumolo, Michael C. Lee, Baohau Yang, Sarath D. Gunapala

Author Affiliations +

Proceedings Volume 7419, Infrared Systems and Photoelectronic Technology IV; 74190B (2009) https://doi.org/10.1117/12.829047
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

Unipolar barriers can block one carrier type but allow the un-impeded flow of the other. They can be used to implement the barrier infra-red detector (BIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. In particular, the InAs/GaSb/AlSb material system, which can be epitaxially grown on GaSb or InAs substrates, is well suited for implementing BIRD structures, as there is considerable flexibility in forming a variety of alloys and superlattices, and tailoring band offsets. We describe our efforts to achieve high-performance long wavelength InAs/GaSb superlattice infrared photodetectors based on the BIRD architecture. Specifically, we report a 10 μm cutoff device based on a complementary barrier infrared detector (CBIRD) design. The detector, without anti-reflection coating, exhibits a responsivity of 1.5 A/W and a dark current density of 1×10^-5 A/cm² at 77K under 0.2 V bias. It reaches 300 K background limited infrared photodetection (BLIP) operation at 101 K, with a black-body BLIP D* value of 2.6×10¹⁰ cm-Hz^1/2/W for 2π field of view under 0.2 V bias.

Citation Download Citation

David Z. Ting, Cory J. Hill, Alexander Soibel, Jean Nguyen, Sam A. Keo, Jason M. Mumolo, Michael C. Lee, Baohau Yang, and Sarath D. Gunapala "Antimonide superlattice barrier infrared detectors", Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 74190B (27 August 2009); https://doi.org/10.1117/12.829047

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