Four micron radiation generated by dysprosium doped lead thiogallate laser

M. E. Doroshenko; T. T. Basiev; V. V. Osiko; H. Jelínková; J. Šulc; M. Jelinek; M. Fibrich; V. V. Badikov

doi:10.1117/12.839670

17 February 2010 Four micron radiation generated by dysprosium doped lead thiogallate laser

M. E. Doroshenko, T. T. Basiev, V. V. Osiko, H. Jelínková, J. Šulc, M. Jelinek, M. Fibrich, V. V. Badikov

Proceedings Volume 7578, Solid State Lasers XIX: Technology and Devices; 757825 (2010) https://doi.org/10.1117/12.839670
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

The lead thiogallate (Dy:PbGa₂S₄) crystal doped with trivalent dysprosium ions was used as a laser active medium for obtaining radiation in mid-IR spectral region. To prove in-band pumping, the Er:YAP laser generating 1.66 μm radiation was used. This radiation was focused by CaF2 lens (f = 100 mm) on the investigated Dy:PbGa₂S₄ crystal placed inside the resonator formed by an in-coupling flat-dichroic mirror with low reflectivity at pumping wavelength and with high reflectivity within the 4-5 μm spectral range, and by an out-coupling concave mirror (500 mm curvature) with reflectances of 86%, 88%, 89%, and 93% at 4325 nm. Three Dy:PbGa₂S₄ active crystals were investigated. The Dy:PbGa₂S₄ laser was working at room temperature without any cooling. The maximal reached output energy was as high as 275 μJ for the optimal mirror reflectance and the best Dy:PbGa₂S₄ crystal. The incident pumping energy was 132 mJ. The measured output radiation wavelength was 4332 nm with the spectral width of 62 nm. From the point of efficiency it was recognized that the in-band pumping directly into ⁶H_11/2 level results in decrease of lasing threshold and increase of slope efficiency.

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M. E. Doroshenko, T. T. Basiev, V. V. Osiko, H. Jelínková, J. Šulc, M. Jelinek, M. Fibrich, and V. V. Badikov "Four micron radiation generated by dysprosium doped lead thiogallate laser", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757825 (17 February 2010); https://doi.org/10.1117/12.839670

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