Near-IR femtosecond and VUV nanosecond laser processing of TeO[sub]2[/sub] crystals

S. Beke; K. Sugioka; K. Midorikawa; J. Bonse

doi:10.1117/12.845074

17 February 2010 Near-IR femtosecond and VUV nanosecond laser processing of TeO₂ crystals

S. Beke, K. Sugioka, K. Midorikawa, J. Bonse

Proceedings Volume 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV; 758415 (2010) https://doi.org/10.1117/12.845074
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

Near-IR femtosecond (τ = 150 fs, λ=775 nm, repetition rate 1 kHz) and VUV nanosecond (τ = 20 ns, λ=157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO₂ (c-TeO₂, grown by the balance controlled Czochalski growth method) surfaces was performed in air using the direct focusing technique. The multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and pulse numbers at each spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot by using two independent extrapolation techniques. We found that in case of NIR femtosecond laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics.

Citation Download Citation

S. Beke, K. Sugioka, K. Midorikawa, and J. Bonse "Near-IR femtosecond and VUV nanosecond laser processing of TeO₂ crystals", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 758415 (17 February 2010); https://doi.org/10.1117/12.845074

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