Fabrication of vertical silicon nanowire photodetector arrays using nanoimprint lithography

Hongkwon Kim; Arthur Zhang; Yu-Hwa Lo

doi:10.1117/12.842276

16 February 2010 Fabrication of vertical silicon nanowire photodetector arrays using nanoimprint lithography

Hongkwon Kim, Arthur Zhang, Yu-Hwa Lo

Proceedings Volume 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III; 759106 (2010) https://doi.org/10.1117/12.842276
Event: SPIE MOEMS-MEMS, 2010, San Francisco, California, United States

Abstract

Nanoimprint lithography (NIL) is an attractive method for its ability to quickly and cheaply pattern nano-scaled dimensions, and is an enabling technology for patterning large area substrates. The benefits of NIL are demonstrated through its application towards large area nanowire image arrays. In this work, we have fabricated and characterized top down silicon nanowire detector arrays by using UV curing NIL and deep Reactive Ion Etching techniques. Fabricated devices show over 10⁶ gain value at low incident light power, which is comparable to high sensitivity of an e-beam written lithography device. This technology is suitable for fabrication of high density, addressable imager arrays.

Citation Download Citation

Hongkwon Kim, Arthur Zhang, and Yu-Hwa Lo "Fabrication of vertical silicon nanowire photodetector arrays using nanoimprint lithography", Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 759106 (16 February 2010); https://doi.org/10.1117/12.842276

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