Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

D. J. Rogers; V. E. Sandana; F. Hosseini Teherani; M. Razeghi

doi:10.1117/12.848512

2 March 2010 Thin film transistors with wurtzite ZnO channels grown on Si₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition

D. J. Rogers, V. E. Sandana, F. Hosseini Teherani, M. Razeghi

Author Affiliations +

Proceedings Volume 7603, Oxide-based Materials and Devices; 760318 (2010) https://doi.org/10.1117/12.848512
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Thin Film Transistors (TFT) were made by growing ZnO on Si₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a V_ON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

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D. J. Rogers, V. E. Sandana, F. Hosseini Teherani, and M. Razeghi "Thin film transistors with wurtzite ZnO channels grown on Si₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition", Proc. SPIE 7603, Oxide-based Materials and Devices, 760318 (2 March 2010); https://doi.org/10.1117/12.848512

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