Paper
11 February 2010 Rare-earth-ion-doped Al2O3 for integrated optical amplification
K. Wörhoff, J. D. B. Bradley, L. Agazzi, M. Pollnau
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Abstract
Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 1020 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 1020 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. 170 Gbit/s high-speed data amplification was demonstrated in an Al2O3:Er3+ channel waveguide with open eye diagrams and without penalty. A lossless 1×2 power splitter has been realized in Al2O3:Er3+ with net gain over a wavelength range of 40 nm (1525-1565 nm) across the complete telecom C-band.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Wörhoff, J. D. B. Bradley, L. Agazzi, and M. Pollnau "Rare-earth-ion-doped Al2O3 for integrated optical amplification", Proc. SPIE 7604, Integrated Optics: Devices, Materials, and Technologies XIV, 760408 (11 February 2010); https://doi.org/10.1117/12.839188
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KEYWORDS
Erbium

Waveguides

Integrated optics

Channel waveguides

Optical amplifiers

Silicon

Picosecond phenomena

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