Paper
12 March 2010 Three-dimensional physical photoresist model calibration and profile-based pattern verification
Mohamed Talbi, Amr Y. Abdo, Todd C. Bailey, Will Conley, Derren N. Dunn, Masashi Fujimoto, John Nickel, No Young Chung, Sajan Marokkey, Si Hyeung Lee, Chandrasekhar Sarma, Dongbing Shao, Ramya Viswanathan
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Abstract
In this paper, we report large scale three-dimensional photoresist model calibration and validation results for critical layer models that span 32 nm, 28 nm and 22 nm technology nodes. Although methods for calibrating physical photoresist models have been reported previously, we are unaware of any that leverage data sets typically used for building empirical mask shape correction models. . A method to calibrate and verify physical resist models that uses contour model calibration data sets in conjuction with scanning electron microscope profiles and atomic force microscope profiles is discussed. In addition, we explore ways in which three-dimensional physical resist models can be used to complement and extend pattern hot-spot detection in a mask shape validation flow.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Talbi, Amr Y. Abdo, Todd C. Bailey, Will Conley, Derren N. Dunn, Masashi Fujimoto, John Nickel, No Young Chung, Sajan Marokkey, Si Hyeung Lee, Chandrasekhar Sarma, Dongbing Shao, and Ramya Viswanathan "Three-dimensional physical photoresist model calibration and profile-based pattern verification", Proc. SPIE 7640, Optical Microlithography XXIII, 76401D (12 March 2010); https://doi.org/10.1117/12.846466
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Cited by 2 scholarly publications.
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KEYWORDS
3D modeling

Photoresist materials

Data modeling

Calibration

Critical dimension metrology

Scanning electron microscopy

3D image processing

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