Antireflective gradient index silica films for high power laser applications

Lianghong Yan; Haibing Lv; Shaobo He; Xiaodong Yuan; Wanguo Zheng

doi:10.1117/12.867596

6 October 2010 Antireflective gradient index silica films for high power laser applications

Lianghong Yan, Haibing Lv, Shaobo He, Xiaodong Yuan, Wanguo Zheng

Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 765519 (2010) https://doi.org/10.1117/12.867596
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Antireflective films are widely applied in optical areas due to their ability of reducing reflection and increasing transmittance of light. A process of depositing antireflective gradient index silica films on fused silica and other optical material surfaces is reported. The films possess the properties of wide-spectrum antireflective transmittance and high laser induced damage threshold. To prepare the film, there is first prepared a silica sol by a controlled proportion of water to alkoxide and a controlled concentration of alkoxide to solution, along with a small amount of catalyst. The prepared sol is dipping deposited onto vitreous substrate, resulting in silica layers with thickness of ~300nm and pore diameter of ~8nm. The silica layer is then etched in order to modify the pores in a graded fashion, forming antireflective gradient index silica films. The films display better than 99.0% transmittance through the entire 1053-350 nm band and laser induced damage threshold as high as 12 J/cm² at 351 nm, meeting a significant technological requirement.

Citation Download Citation

Lianghong Yan, Haibing Lv, Shaobo He, Xiaodong Yuan, and Wanguo Zheng "Antireflective gradient index silica films for high power laser applications", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 765519 (6 October 2010); https://doi.org/10.1117/12.867596

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