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In this work we report our results on the study of a-GexSi1-x intrinsic films used as thermo-sensing element in
microbolometers. These intrinsic films are attractive because of their relatively high activation energy (Ea ≈ 0.37 eV) and
consequently high temperature coefficient of resistance (TCR≈ -0.047 K-1), and as well their higher room temperature
conductivity (σRT ≈ 6x10-5 (Ωcm)-1), which is of around 3 - 4 orders of magnitude larger than that of the intrinsic a-Si:H
films.
Here we present a study of fabrication and performance characteristics of two different structures of microbolometers
with a-GexSi1-x thermo-sensing films, labeled as planar and sandwich configurations. Metal electrodes were either
planar providing current flow along the thermo-sensing layer or sandwich with current perpendicular to the thermosensing
film surface. Current-voltage characteristics with and without IR illumination were performed and the
responsivity of the devices was calculated. The noise spectra of the devices was studied, that allowed to determine the
detectivity of the devices. The thermal response time was measured in the different microbolometer structures. These
data are analyzed for the different micro-bolometer configurations and are compared with published data.
Mario Moreno,Alfonso Torres, andAndrey Kosarev
"Uncooled microbolometers with GexSi1-x thermo-sensing layer deposited by plasma with different device configurations", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766014 (3 May 2010); https://doi.org/10.1117/12.853561
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Mario Moreno, Alfonso Torres, Andrey Kosarev, "Uncooled microbolometers with Ge[sub]x[/sub]Si[sub]1-x[/sub] thermo-sensing layer deposited by plasma with different device configurations," Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766014 (3 May 2010); https://doi.org/10.1117/12.853561