Highly reflective intermediate layers in crystalline silicon thin film solar cell

S. Lindekugel; M. Künle; S. Janz; S. Reber

doi:10.1117/12.854675

18 May 2010 Highly reflective intermediate layers in crystalline silicon thin film solar cell

S. Lindekugel, M. Künle, S. Janz, S. Reber

Proceedings Volume 7725, Photonics for Solar Energy Systems III; 772506 (2010) https://doi.org/10.1117/12.854675
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

In this paper the applicability and efficiency of different intermediate layer (IL) stacks for the implementation in recrystallized wafer equivalent (RexWE) solar cells are investigated. The requirements for the IL in the RexWE concept are short term stability at temperatures above 1400 °C, high reflectivity for wavelengths exceeding 600 nm, electrical conductivity and acting as a diffusion barrier against metallic impurities. Various combinations of stoichiometric SiC layers, silicon rich SiC layers and SiO₂ layers were tested as IL stacks regarding their performance after a zone melting recrystallization (ZMR) process. For the first time, samples with an IL consisting of a SiC multilayer were recrystallized and successfully processed to solar cells.

Citation Download Citation

S. Lindekugel, M. Künle, S. Janz, and S. Reber "Highly reflective intermediate layers in crystalline silicon thin film solar cell", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 772506 (18 May 2010); https://doi.org/10.1117/12.854675

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