Laser Linking For Defect Avoidance And Customization

J. I. Raffel

doi:10.1117/12.940393

1 September 1987 Laser Linking For Defect Avoidance And Customization

J. I. Raffel

Proceedings Volume 0774, Lasers in Microlithography; (1987) https://doi.org/10.1117/12.940393
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A laser linking technology has been developed which allows the formation of connections after fabrication in order to circumvent defects for yield enhancement in wafer-scale silicon circuits. This technique also facilitates rapid-turnaround customization. A number of digital signal processing systems have now been implemented with applications to speech, radar and image processing. In order to expedite technology transfer a new link structure has been developed which can be fabricated using a standard MOS process and has been demonstrated using the MOSIS silicon foundry.

Citation Download Citation

J. I. Raffel "Laser Linking For Defect Avoidance And Customization", Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); https://doi.org/10.1117/12.940393

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