Organic n-channel thin film transistors based on dichlorinated naphthalene diimides

M. Stolte; S.-L. Suraru; F. Würthner; J. H. Oh; Z. Bao; J. Brill; M. Könemann; J. Qu; U. Zschieschang; H. Klauck

doi:10.1117/12.859829

17 August 2010 Organic n-channel thin film transistors based on dichlorinated naphthalene diimides

M. Stolte, S.-L. Suraru, F. Würthner, J. H. Oh, Z. Bao, J. Brill, M. Könemann, J. Qu, U. Zschieschang, H. Klauck

Proceedings Volume 7778, Organic Field-Effect Transistors IX; 777804 (2010) https://doi.org/10.1117/12.859829
Event: SPIE Photonic Devices + Applications, 2010, San Diego, California, United States

Abstract

Five core-dichlorinated naphthalene diimides (NDIs) bearing several fluoroalkyl-substituents at the imide nitrogens were synthesized, characterized and employed in organic n-channel thin-film transistors with a vacuum-deposited semiconductor layer on 110 nm thick SiO₂ (100 nm)/AlO_x (8 nm)/SAM (1.7 nm) and 5.7 nm thick AlO_x (3.6 nm)/SAM (2.1 nm) gate dielectrics. The electron mobility of the thin-film transistors under ambient conditions is as large as 1.3 cm²/Vs on the thicker gate dielectric. On the thinner gate dielectric the mobility is lower (0.4 cm²/Vs) but enables switching at gate-source voltages of only 3V. Such outstanding performance together with the feasible synthetic access to these compounds make these semiconductors highly promising for low-cost, large-area, and flexible electronics.

Citation Download Citation

M. Stolte, S.-L. Suraru, F. Würthner, J. H. Oh, Z. Bao, J. Brill, M. Könemann, J. Qu, U. Zschieschang, and H. Klauck "Organic n-channel thin film transistors based on dichlorinated naphthalene diimides", Proc. SPIE 7778, Organic Field-Effect Transistors IX, 777804 (17 August 2010); https://doi.org/10.1117/12.859829

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