In situ probing thickness dependence of the field effect mobility of naphthalenetetracarboxylic diimide-based field effect transistors

Shun-Wei Liu; Chih-Chien Lee; Hung-Lin Tai; Je-Min Wen; Chin-Ti Chen

doi:10.1117/12.861360

17 August 2010 In situ probing thickness dependence of the field effect mobility of naphthalenetetracarboxylic diimide-based field effect transistors

Shun-Wei Liu, Chih-Chien Lee, Hung-Lin Tai, Je-Min Wen, Chin-Ti Chen

Author Affiliations +

Proceedings Volume 7778, Organic Field-Effect Transistors IX; 77780X (2010) https://doi.org/10.1117/12.861360
Event: SPIE Photonic Devices + Applications, 2010, San Diego, California, United States

Abstract

We present an in situ vacuum measurement in the study of electrical characteristics of n-channel OFETs based on NTCDI-C8F15 semiconductors. Electron mobility of NTCDI-C8F15 OFETs was estimated as a function of the number of ML using in situ electrical measurement. The electron mobility has been observed for the thin film transistor of NTCDI-C8F15 as thin as 2 ML (~ 5.4 nm). Field-effect mobilities rapidly increase with the increase of the film thickness. Electron mobility of OFETs reaches saturation thickness (d₀) about 3.5 ML. Our experimental results indicated that the molecular layers beyond d₀ contribute little to the carrier transport in the semiconducting channel. Our experimental results have demonstrated that the grown fashion of the first few ML of NTCDI-C8F15 on the substrate strongly influences the carrier mobility, threshold voltage, and on-off ratio. Keywords: NTCDI, OFET, carrier mobility, in-situ, n-type semiconductor, monolayer

Citation Download Citation

Shun-Wei Liu, Chih-Chien Lee, Hung-Lin Tai, Je-Min Wen, and Chin-Ti Chen "In situ probing thickness dependence of the field effect mobility of naphthalenetetracarboxylic diimide-based field effect transistors", Proc. SPIE 7778, Organic Field-Effect Transistors IX, 77780X (17 August 2010); https://doi.org/10.1117/12.861360

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