The study of heat transfer by the ceramic thin films on LED

Ming-Seng Hsu; Chung-Chih Chang; Jen-Wei Huang; Feng-Lin Shyu; Yau-Chyr Wang

doi:10.1117/12.859851

18 August 2010 The study of heat transfer by the ceramic thin films on LED

Ming-Seng Hsu, Chung-Chih Chang, Jen-Wei Huang, Feng-Lin Shyu, Yau-Chyr Wang

Proceedings Volume 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV; 77810S (2010) https://doi.org/10.1117/12.859851
Event: SPIE Photonic Devices + Applications, 2010, San Diego, California, United States

Abstract

Heat transfer has the important influence in quantum effect of light emitting diode (LED). In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the printed circuit board (PCB) and aluminum plate. Because it transfers the heat from electric device to the aluminum plate which removes the heat. In this work, the alumina nitride (AlN) thin film soldered the LED lamps to enhance the heat transfer. The films were fabricated onto 1070 aluminum substrate by vacuum sputtering and plasma spraying technologies individually. The dielectric coatings were characterized by several subsequent analyses, especially the real temperature measurement of dielectric coating films. The X-Ray diffraction (XRD) diagram analysis reveals that ceramic phase can successfully grow on the individual substrate. The studied results show that AlN thin film fabricated by vacuum sputtering has low sheet resistivity, high hardness, high critical load, and good thermal conduction (200 W/m-K); but, the same of coating fabricated by plasma spraying technology had the best heat transfer as compared to the other samples.

Citation Download Citation

Ming-Seng Hsu, Chung-Chih Chang, Jen-Wei Huang, Feng-Lin Shyu, and Yau-Chyr Wang "The study of heat transfer by the ceramic thin films on LED", Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 77810S (18 August 2010); https://doi.org/10.1117/12.859851

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